Rapid Multi Property Measurement System

Heating up to 3000K within one second!
This system measures thermophysical properties by applying current directly to a sample to heat up to higher temperature within one second. Measurable standard properties are electrical resistivity, total emissivity, specific heat capacity, thermal expansion rate and thermal diffusivity.

Features

  • Applying current directly to a sample can make it possible to heat up to more than 2000℃ quickly.
  • Heat-resistant materials used in high temperature of more than 2000℃ can be measured.
  • More than two properties can be measured simultaneously.
    Electrical resistivity, Total emissivity*1, Specific heat capacity, Thermal expansion rate*2, Thermal diffusivity*2
  • Temperatrure controllability: within 1% (at 2800℃)
  • 1Easy installation with power supply 100V/15A and no need of cooling mechanisms like cooling water
  • High energy-saving is expected because measurement can be done in a short time. 
    *1 Hemispherical total emissivity (compliant with JIS-R1693-3) 
    *2 Optional

A patent and a standard

  • Hemispherical total emissivity (compliant with JIS-R1693-3)
  • Measurement method for emissivity of fine ceramics and ceramic matrix composites
  • Part 3: Hemispherical total emissivity by direct heating calorimetry

Applications

  • Carbon materials, Metal materials and Space development etc.

Specifications

Temerature range 700 ~ 2800℃
Max.heating rate 3000℃ /s
Atmosphere vacuum
Sample size Φ 3 × L 100 (mm) (Negotiable)
Measurement property Electrical resistivity, Specific heat capacity, Hemispherical total emissivity
Option: Thermal expansion rate, Thermal diffusivity

Brief mechanism

img_rmp-101-en.png

Measurement example

Electrical resistivity

img_rmp-102.pngHemispherical total emissivity

img_rmp-103.png

Heating rate data

img_rmp-104.pngSample: Carbon material

At 2800°C, a target temperature was reached within one second with temperature control of less than 0.2% (+5°C, -2°C).

※Heating rate accuracy depends on sample shape.